Carbon tetrafluoride CF4 is a source of fluorine and free radical carbon fluoride, used in various wafer etching processes. Carbon tetrafluoride CF4 is combined with oxygen to etch polysilicon, silicon dioxide and silicon nitride. Carbon tetrafluoride is relatively inert under normal conditions and can cause suffocation in unventilated areas. In a radio frequency plasma environment, fluorine free radicals appear in the form of typical carbon trifluoride or carbon difluoride. High-purity carbon tetrafluoride can well control the processing process, so that the size and shape can be better controlled. This is different from other halocarbons that are not conducive to various special controls (such as semiconductor anisotropy control) when they encounter air or oxygen. Its high-purity gas and the mixture of high-purity carbon tetrafluoride gas and high-purity cation oxygen can be widely used in candle etching of silicon, silicon dioxide, silicon nitride, phosphorus silicon glass and tungsten thin film materials.
Carbon tetrafluoride CF4 has an anesthetic effect at high concentrations. Its high-purity gas and its mixture with high-purity oxygen are the most widely used plasma etching gases in the microelectronics industry. They can also be used as low-temperature refrigerants and low-temperature insulating media. It has good chemical and thermal stability, is inert to many reagents, and does not hydrolyze at 1000°C. It does not react with copper, nickel, and tungsten at room temperature. Due to the extremely strong chemical stability of the C-F bond, perfluorocarbons represented by CF4 can be considered to be basically non-toxic.
Tetrafluoromethane (CF4) has high stability and is a completely non-flammable gas. It does not react with acids, alkalis, and oxidants at room temperature, does not react with transition metals such as Cu, Ni, W, and Mo below 900°C, and does not react with carbon, hydrogen, and CH4 below 1000°C. It can react with liquid ammonia-sodium metal reagents at room temperature, and CF4 can react with alkali metals, alkaline earth metals, and SiO2 at high temperatures to generate corresponding fluorides. CF4 begins to decompose at 800°C and can react with CO and CO2 to form COF2 under the action of an electric arc. Some people have also tried to polymerize CF4 at carbon arc temperatures to synthesize other fluorocarbons.